jan. 2009 mitsubishi igbt modules CM400HX-24A high power switching use CM400HX-24A ? i c ................................................................... 400a ? v ces ......................................................... 1200v ? single ? flatbase type / insulated package / copper (non-plating) base plate ? rohs directive compliant application general purpose inverters, servo amplif i ers, power supply, etc. outline drawing & circuit diagram dimensions in mm 4-5.5 mounting holes ?18.8 ?4.2 ?15 (102.25) ?95 ?72.14 ?68.33 (7.75) 3.5 terminal t = 0.8 section a 1.5 12.5 2.5 4.3 2.1 (7.4) 1.2 (3.81) 1.15 0.65 22 (14) (14) (13.5) (13.5) 12 17 12 66 17 121.7 110 0.5 50 0.5 62 57.5 39 99 94.5 137 152 46 47 48 24 23 22 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 21 20 19 18 17 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 6.5 a (21.14) 4-m6 nuts (5.4) 12.5 (screwing depth) 17 +1 -0.5 13 17 (20.5) 0.8 7 (3) 0 ntc c (47) c (48) th1 (1) th2 (2) g1 (15) e1 (16) c (22) e (24) e (23) label ?pin positions with tolerance 0.5 circuit diagram 5 p m f s b o d f p u i f s x j t f t q f d j g j f e division of dimension 0.5 to 3 over 3 to 6 over 6 to 30 over 30 to 120 over 120 to 400 tolerance 0.2 0.3 0.5 0.8 1.2
2 jan. 2009 mitsubishi igbt modules CM400HX-24A high power switching use absolute maximum ratings (t j = 25 c, unless otherwise specified) inverter part symbol parameter conditions rating unit v ces v ges i c i crm p c i e (note.3) i erm(note.3) t j t stg v iso collector-emitter voltage gate-emitter voltage collector current maximum collector dissipation emitter current (free wheeling diode forward current) junction temperature storage temperature isolation voltage base plate flatness torque strength torque strength weight g-e short c-e short dc, t c = 88c pulse t c = 25c t c = 25c pulse terminals to base plate, f = 60hz, ac 1 minute on the centerline x, y main terminals m6 screw mounting m5 screw (typical) 1200 20 400 800 2450 400 800 ?0 ~ +150 ?0 ~ +125 2500 0 ~ +100 3.5 ~ 4.5 2.5 ~ 3.5 330 v a w a c vrms m n? g (note. 1) (note. 4) (note. 1, 5) (note. 1) (note. 4) (note. 8) note. 8: the base plate flatness measurement points are in the following figure. 9 : ) f b u t j o l t j e f ) f b u t j o l t j e f d p o w f y d p o d b w f
3 jan. 2009 mitsubishi igbt modules CM400HX-24A high power switching use electrical characteristics (tj = 25 c, unless otherwise specified) inverter part limits unit min. typ. max. i ces v ge(th) i ges v ce(sat) c ies c oes c res q g t d(on) t r t d(off) t f t rr (note.3) q rr (note.3) v ec(note.3) r lead r th(j-c)q r th(j-c)r r th(c-f) r gint r g collector cutoff current gate-emitter threshold voltage gate leakage current collector-emitter saturation voltage input capacitance output capacitance reverse transfer capacitance total gate charge turn-on delay time turn-on rise time turn-off delay time turn-off fall time reverse recovery time reverse recovery charge emitter-collector voltage module lead resistance thermal resistance (junction to case) contact thermal resistance (case to heat sink) internal gate resistance external gate resistance v ce = v ces , v ge = 0v i c = 40ma, v ce = 10v v ge = v ges , v ce = 0v i c = 400a, v ge = 15v i c = 400a, v ge = 15v v ce = 10v v ge = 0v v cc = 600v, i c = 400a, v ge = 15v v cc = 600v, i c = 400a v ge = 15v, r g = 0.75 inductive load (i e = 400a) i e = 400a, v ge = 0v i e = 400a, v ge = 0v main terminals-chip per igbt per free wheeling diode thermal grease applied 7 2.0 2.2 1.9 2000 13 2.6 2.16 2.5 0.6 0.015 3 6 1 8 0.5 2.6 66 6.0 1.3 660 190 700 600 250 3.4 0.033 0.048 3.9 7.8 7.8 6 2.1 4.2 0.75 ma v a v nf nc ns c v m k/w t j = 25c t j = 125c chip t c = 25c t c = 125c (note. 6) (note. 2) (note. 1) (note. 1) (note. 6) t j = 25c t j = 125c chip (note. 6) symbol parameter conditions note.1: case temperature (t c ), heat sink temperature (t f ) measured point is just under the chips. (refer to the figure of the chip location.) 2: typical value is measured by using thermally conductive grease of = 0.9w/(m?). 3: i e , i erm , v ec , t rr and q rr represent ratings and characteristics of the anti-parallel, emitter-collector free wheeling diode (fwdi). 4: pulse width and repetition rate should be such that the device junction temperature (t j ) dose not exceed tjmax rating. 5: junction temperature (t j ) should not increase beyond 150 c. 6: pulse width and repetition rate should be such as to cause negligible temperature rise. (refer to the figure of the test circuit for v ce(sat) and v ec ) 7: ntc thermistor part limits unit min. typ. max. r r/r b (25/50) p 25 zero power resistance deviation of resistance b constant power dissipation t c = 25c t c = 100 c, r 100 = 493 approximate by equation t c = 25c 5.00 3375 5.15 +7.8 10 4.85 ?.3 k % k mw (note. 7) symbol parameter conditions r 25 : resistance at absolute temperature t 25 [k]; t 25 = 25 [c]+273.15 = 298.15 [k] r 50 : resistance at absolute temperature t 50 [k]; t 50 = 50 [c]+273.15 = 323.15 [k] b (25/50) = in( )/( ) r 25 r 50 1 t 25 1 t 50
4 jan. 2009 mitsubishi igbt modules CM400HX-24A high power switching use chip location (top view) dimensions in mm (tolerance: 1mm) (121.7) (152) (110) 0 87.9 (50) (62) label side 0 21.8 74.3 73.6 35.2 45.0 di tr di tr th 46 47 48 24 23 22 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 21 20 19 18 17 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 each mark points the center position of each chip. tr: igbt, di: fwdi, th: ntc thermistor t rr, q rr test waveform t i e t rr i rr 1/2 ? i rr q rr = 1/2 ? i rr ? t rr 0a switching time test circuit and waveforms v cc + i c v ce i e r g v ge + v ge v ge load 0v v ge v ge i c t d(on) t d(off) t r t f 90% 10% 0v 0a 90% 0% v ce(sat) test circuit v ec test circuit i c v ge = 15v c e g e(es) c(cs) v i e v ge = 0v c e g e(es) c(cs) v
5 jan. 2009 performance curves 800 0 100 200 300 400 500 600 700 10 0 2468 13579 t j = 25c v ge = 20v 15 12 13 11 10 9 4 3.5 2 1.5 3 2.5 1 0.5 0 0 100 200 300 400 500 600 700 800 t j = 25c t j = 125c v ge = 15v 10 0 2 4 6 8 20 6 8 10 12 14 16 18 t j = 25c i c = 800a i c = 400a i c = 160a 10 2 10 1 5 7 2 3 04 0.5 1 1.5 2 2.5 3 3.5 10 3 5 7 2 3 t j = 25c t j = 125c 10 ? 2 10 0 357 2 10 1 357 2 10 2 357 v ge = 0v 10 1 10 2 23 57 10 3 23 57 10 1 10 0 10 2 5 7 10 3 2 3 5 7 2 3 5 7 2 3 t d(off) t d(on) t f t r conditions: v cc = 600v v ge = 15v r g = 0.75 t j = 125c inductive load output characteristics (typical) inverter part collector-emitter saturation voltage characteristics (typical) inverter part 10 ? 7 5 3 2 10 0 7 5 3 2 10 1 7 5 3 2 10 2 7 5 3 2 10 3 c ies c oes c res collector current i c (a) collector-emitter voltage v ce (v) collector-emitter saturation voltage v ce(sat) (v) gate-emitter voltage v ge (v) capacitance characteristics (typical) inverter part capacitance (nf) collector-emitter voltage v ce (v) collector current i c (a) collector-emitter saturation voltage characteristics (typical) inverter part free wheeling diode forward characteristics (typical) inverter part emitter-collector voltage v ec (v) half-bridge switching characteristics (typical) inverter part collector current i c (a) collector-emitter saturation voltage v ce(sat) (v) emitter current i e (a) switching time (ns) mitsubishi igbt modules CM400HX-24A high power switching use
6 jan. 2009 10 ? 10 0 57 10 1 23 57 23 conditions: v cc = 600v v ge = 15v i c , i e = 400a t j = 125c inductive load 10 ? 10 0 57 10 1 23 57 23 e off e on e rr 10 1 10 1 10 0 10 2 5 7 10 3 2 3 5 7 2 3 5 7 2 3 10 1 10 0 10 2 5 7 10 3 2 3 5 7 2 3 5 7 2 3 conditions: v cc = 600v v ge = 15v r g = 0.75 t j = 25c inductive load 10 2 57 10 3 23 57 23 i rr t rr conditions: v cc = 600v v ge = 15v i c = 400a t j = 125c inductive load 10 2 10 1 10 0 conditions: v cc = 600v v ge = 15v r g = 0.75 t j = 125c inductive load 2 3 5 7 2 3 5 7 10 4 10 3 10 2 2 3 5 7 2 3 5 7 10 1 10 2 57 10 3 23 57 23 e off e on e rr t d(off) t d(on) t r t f 0 500 1000 1500 2000 2500 3000 0 5 10 15 20 v cc = 400v v cc = 600v i c = 400a 10 ? 10 0 7 5 3 2 10 ? 7 5 3 2 10 ? 7 5 3 2 10 ? 23 57 10 ? 23 57 10 ? 23 57 10 ? 23 57 10 ? 23 57 10 0 23 57 10 1 single pulse, t c = 25c inverter igbt part : per unit base = r th(j?) = 0.051k/w inverter fwdi part : per unit base = r th(j?) = 0.093k/w half-bridge switching characteristics (typical) inverter part switching loss (mj/pulse) gate resistance r g () half-bridge switching characteristics (typical) inverter part switching time (ns) gate resistance r g () half-bridge switching characteristics (typical) inverter part switching loss (mj/pulse) l rr (a), t rr (ns) collector current i c (a) emitter current i e (a) reverse recovery characteristics of free wheeling diode (typical) inverter part emitter current i e (a) gate charge characteristics (typical) inverter part gate-emitter voltage v ge (v) gate charge q g (nc) transient thermal impedance characteristics normalized transient thermal impedance z th(j?) time (s) mitsubishi igbt modules CM400HX-24A high power switching use
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